Energy band structure of two ions in a one-dimensional Paul trap Paul阱中一维两离子系统的能带结构
Ancient heave slope band controls distributing of subtle trap. 古隆起斜坡带控制隐蔽油气藏的分布。
The band trap band tunneling current is dominant of this current. 这股电流主要是陷阱辅助隧穿电流。
The band gap between π band and π~ band, as well as the trap energy decreases with increasing C-C concentration, leading to increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band. 随着C-C含量的增大,π价带态和π导带态之间的带隙减小,电荷陷阱深度减小,陷阱中的电子在场增强热激发作用下更容易进入导带,导致薄膜漏电流增加。
The unconditional stability of three-dimensional ADI-FDTD method is proved, and the three-dimensional metal resonant cavity structures, microstrip inset-fed patch antenna as well as band trap filter are analyzed. 本文证明了三维ADI-FDTD方法的无条件稳定性,分析了三维金属谐振腔结构,插入式馈电微带贴片天线和带阻滤波器。
The adsorption of Ag introduces gap states near or below the conduction band minimum and the Fermi level locates next to or merges in the conduction band, which can act as photo-generated electron trap centers and inhibit the recombination of electron-hole pairs. Ag吸附引入隙态位于导带底(CBM)以下,且费米能级同样处于导带底附近,此隙态可以作为光生电子捕获中心阻碍电子空穴对的复合。
Substitutional Ag introduces some localized gap states, while the Fermi level is pinned near the top of valence band, and the impurity states can trap the hole to suppress the recombination of photo-generated carriers. 替位Ag会引入一些定域隙态,同时费米能级钉扎在价带顶,杂质态可以捕获空穴以抑制光生载流子的复合。
Get the flat band voltage of the MIS structure by using high frequency CV measurement, get the trap distribution in the insulator film by calculate the relation between traps location and the flat band voltage offset. 利用高频CV测量得到MIS结构的平带电压,根据陷阱与平带电压偏移量之间的关系,得到陷阱在绝缘膜中的分布。